PROCEEDINGS OF THE AMERICAN LIBRARY ASSOCIATION CONFERENCE PROGRAM ON COLLECTION SECURITY AND LIFE SAFETY, SAN FRANCISCO, JUNE 30, 1981VASI J.1982; LIBR. ARCH. SECUR.; ISSN 0196-0075; USA; DA. 1982; VOL. 4; NO 3; PP. 9-39Article

Trends in staff furnishings for librariesVASI, J.Library trends. 1987, Vol 36, Num 2, pp 377-390, issn 0024-2594Article

DIFFUSION EFFECTS IN THE DOUBLE INJECTION NEGATIVE-RESISTANCE PROBLEMVASI J; WESTGATE CR.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 2; PP. 269-275; BIBL. 16 REF.Serial Issue

RAPID MEASUREMENT OF LIFETIME USING A RAMPED MOS CAPACITOR TRANSIENTTIWARI P; BHAUMIK B; VASI J et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 7; PP. 695-698; BIBL. 15 REF.Article

THE NATURE OF INTRINSIC HOLE TRAPS IN THERMAL SILICON DIOXIDEMANCHANDA L; VASI J; BHATTACHARYYA AB et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4690-4696; BIBL. 29 REF.Article

HOLE TRAPS IN THERMAL SILICON DIOXIDE INTRODUCED BY CHLORINEMANCHANDA L; VASI J; BHATTACHARYYA AB et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 8; PP. 744-747; BIBL. 18 REF.Article

THE EFFECT OF HIGH TEMPERATURE ANNEALING ON THE SPATIAL VARIATION OF BULK LIFETINE NEAR THE SI-SIO₂ INTERFACEMANCHANDA L; VASI J; BHATTACHARYYA AB et al.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 10; PP. 1015-1020; BIBL. 32 REF.Article

DETERMINATION OF SURFACE STATE DISTRIBUTION FROM PULSED MOS CAPACITOR TRANSIENTSMANCHANDA L; VASI J; BHATTACHARYYA AB et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 1; PP. 29-32; BIBL. 7 REF.Article

A NOVEL DOUBLE DIELECTRIC TWO PHASE CCD WITH OVERLAPPING GATESCHARI KS; BIMAL MATHUR; VASI J et al.1979; MICROELECTRON. J.; GBR; DA. 1979; VOL. 9; NO 4; PP. 24-26; BIBL. 6 REF.Article

FEED FORWARD DUE TO BARRIER MODULATION IN CHARGE-COUPLED DEVICESMADAN SK; MATHUR B; VASI J et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 8; PP. 1269-1276; BIBL. 7 REF.Article

A two-dimensional numerical simulation of oxide charge buildup in MOS transistors due to radiationVINITA VASUDEVAN; VASI, J.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 3, pp 383-390, issn 0018-9383Article

A simulation of the multiple trapping model for continuous time random walk transportVASUDEVAN, V; VASI, J.Journal of applied physics. 1993, Vol 74, Num 5, pp 3224-3230, issn 0021-8979Article

Radiation-induced interface-state generation in reoxidized nitrided SiO₂RAMGOPAL RAO, V; VASI, J.Journal of applied physics. 1992, Vol 71, Num 2, pp 1029-1031, issn 0021-8979Article

ELECTRICAL PROPERTIES OF CDS-SIO₂-SI STRUCTURESBHATTACHARYYA AB; NAHAR RK; NAGCHOUDHURI D et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 1; PP. 390-393; BIBL. 6 REF.Article

Creating a library electronic classroomVASI, J; LAGUARDIA, C.Online (Weston, CT). 1994, Vol 18, Num 5, pp 75-84, issn 0146-5422, 8 p.Article

Profiling generation lifetime in an MOS capacitor using a multistep constant-capacitance techniqueLAL, R; VASI, J.Solid-state electronics. 1987, Vol 30, Num 8, pp 801-805, issn 0038-1101Article

A numerical simulation of hole and electron trapping due to radiation in silicon dioxideVASUDEVAN, V; VASI, J.Journal of applied physics. 1991, Vol 70, Num 8, pp 4490-4495, issn 0021-8979Article

Modelling of a depletion-mode MOSFETPARIKH, C. D; VASI, J.Solid-state electronics. 1987, Vol 30, Num 7, pp 699-703, issn 0038-1101Article

The nature of the hole traps in reoxidized nitrided oxide gate dielectricsMALLIK, A; VASI, J; CHANDORKAR, A. N et al.Journal of applied physics. 1993, Vol 74, Num 4, pp 2665-2668, issn 0021-8979Article

Optimization and realization of sub 100nm Channel length lateral Asymmetric Channel P-MOSFETSHEMKAR, M; VASI, J; RAMGOPAL RAO, V et al.SPIE proceedings series. 2000, pp 584-587, isbn 0-8194-3601-1Conference Paper

ULSI MOS transistors with jet vapour deposited (JVD) silicon nitride for the gate insulatorMAHAPATRA, S; MANJULARANI, K. N; RAMGOPAL RAO, V et al.SPIE proceedings series. 2000, pp 803-810, isbn 0-8194-3601-1Conference Paper

HOTMOS : A 2-D MOS device simulator for hot carrier effectsSUBBARAMAN, S; SHARMA, D. K; VASI, J et al.SPIE proceedings series. 1998, pp 1064-1067, isbn 0-8194-2756-X, 2VolConference Paper

Radiation-induced degradation of bipolar transistorsTOPKAR, A; MATHEW, T; LAL, R et al.SPIE proceedings series. 1998, pp 686-689, isbn 0-8194-2756-X, 2VolConference Paper

Design of a 0.1 μm single halo (SH) thin film silicon-on-insulator (SOI) MOSFET for analogue applicationsHAKIM, Najeeb-Ud-Din; RAMGOPAL RAO, V; VASI, J et al.Semiconductor science and technology. 2005, Vol 20, Num 9, pp 895-902, issn 0268-1242, 8 p.Article

High field stressing effects in JVD Nitride capacitorsMANIULARANI, K. N; RAMGOPAL RAO, V; VASI, J et al.SPIE proceedings series. 2002, pp 1316-1319, isbn 0-8194-4500-2, 2VolConference Paper